دیتاشیت MJD31CG
مشخصات دیتاشیت
| نام دیتاشیت |
MJD31CG
|
| حجم فایل |
97.077
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
11
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi MJD31CG
-
Transistor Type:
NPN
-
Operating Temperature:
-65°C~+150°C@(Tj)
-
Collector Current (Ic):
3A
-
Power Dissipation (Pd):
15W
-
Transition Frequency (fT):
3MHz
-
DC Current Gain (hFE@Ic,Vce):
10@3A,4V
-
Collector Cut-Off Current (Icbo):
50uA
-
Collector-Emitter Breakdown Voltage (Vceo):
100V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1.2V@3A,375mA
-
Package:
TO-252
-
Manufacturer:
onsemi
